ONSEMI NSVF4017SG4T1G | 搜芯易Sourcengine

ONSEMI NSVF4017SG4T1G

生命周期状态
NRFND
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trans RF BJT NPN 12V 0.1A 450mW Automotive 4-Pin MCPH T/R
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-F4
Configuration
SINGLE
JESD-609 Code
e6
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
Terminal Finish
Tin/Bismuth (Sn/Bi)
Terminal Position
DUAL
Number of Elements
1
Reference Standard
AEC-Q101
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
X BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
60
Operating Temperature-Max
150 Cel
Operating Temperature-Min
-55 Cel
Collector Current-Max (IC)
0.1 A
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
0.45 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
12 V
Peak Reflow Temperature (Cel)
260
Transition Frequency-Nom (fT)
10000 MHz
Time@Peak Reflow Temperature-Max (s)
30