ONSEMI NSVF4009SG4T1G | 搜芯易Sourcengine

ONSEMI NSVF4009SG4T1G

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trans RF BJT NPN 3.5V 0.04A 120mW Automotive 4-Pin MCPH T/R
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.75
SB Code
8541.21.00.80

Application
AMPLIFIER
JESD-30 Code
R-PDSO-F4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
J-STD-609 Code
e6
Terminal Finish
Tin/Bismuth (Sn/Bi)
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
L BAND
DC Current Gain-Min (hFE)
50
Power Dissipation-Max (W)
0.12
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
0.04
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Collector-emitter Voltage-Max (V)
3.5
Power Dissipation Ambient-Max (W)
0.12
Transition Frequency-Nom (fT) (MHz)
25
Screening Level / Reference Standard
AEC-Q101
Time@Peak Reflow Temperature-Max (s)
30