ONSEMI NSVBCH817-16LT1G | 搜芯易Sourcengine

ONSEMI NSVBCH817-16LT1G

生命周期状态
Active-Unconfirmed
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
类别
Semiconductors Transistors Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G3
Configuration
SINGLE
JEDEC-95 Code
TO-236
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
VCEsat-Max (V)
0.7
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
100
Power Dissipation-Max (W)
0.3
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.5
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Collector-emitter Voltage-Max (V)
45
Transition Frequency-Nom (fT) (MHz)
100
Screening Level / Reference Standard
AEC-Q101