NSVBC124XDXV6T1G
ONSEMI
- 生命周期状态Active
- REACHREACH compliant
- 说明ONSEMI - NSVBC124XDXV6T1G - Dual NPN Bipolar Digital Transistor (BRT) / REEL
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-F6
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- J-STD-609 Codee3
- Terminal FinishMatte Tin (Sn) - annealed
- Terminal PositionDUAL
- Additional FeatureBUILT IN BIAS RESISTANCE RATIO IS 2.14
- Number of Elements2
- Number of Terminals6
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- DC Current Gain-Min (hFE)80
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Collector Current-Max (IC) (A)0.1
- Collector-emitter Voltage-Max (V)50
- Screening Level / Reference StandardAEC-Q101
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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NSVBC124XDXV6T1G