ONSEMI NSVB143TPDXV6T1G | 搜芯易Sourcengine

ONSEMI NSVB143TPDXV6T1G

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
TRANS NPN/PNP PREBIAS SOT563
类别
Semiconductors Transistors Unijunction Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-F6
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
Terminal Position
DUAL
Additional Feature
BUILT IN BIAS RESISTOR
Number of Elements
2
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN AND PNP
DC Current Gain-Min (hFE)
160
Power Dissipation-Max (W)
0.5
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.1
Collector-emitter Voltage-Max (V)
50
Screening Level / Reference Standard
AEC-Q101