ONSEMI NSS20601CF8T1G | 搜芯易Sourcengine

ONSEMI NSS20601CF8T1G

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trans GP BJT NPN 20V 6A 1400mW 8-Pin Chip FET T/R
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-C8
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
C BEND
J-STD-609 Code
e3
Terminal Finish
Matte Tin (Sn) - annealed
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
200
Power Dissipation-Max (W)
1.4
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
240
Peak Reflow Temperature (Cel)
260
Turn-off Time-Max (toff) (ns)
980
Collector Current-Max (IC) (A)
6
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
20
Transition Frequency-Nom (fT) (MHz)
140
Time@Peak Reflow Temperature-Max (s)
30