ONSEMI NSM80101MT1G | 搜芯易Sourcengine

ONSEMI NSM80101MT1G

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
NPN Transistor with Dual Series Switching Diode
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G6
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e3
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
120
Power Dissipation-Max (W)
0.4
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
0.5
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
80
Transition Frequency-Nom (fT) (MHz)
150
Time@Peak Reflow Temperature-Max (s)
30