ONSEMI NSM46211DW6T1G | 搜芯易Sourcengine

ONSEMI NSM46211DW6T1G

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
TRANS NPN PREBIAS/NPN SOT363
类别
Semiconductors Transistors Unijunction Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G6
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Finish
TIN
Terminal Position
DUAL
Additional Feature
BUILT IN BIAS RESISTOR RATIO IS 1.0
Number of Elements
2
Number of Terminals
6
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
200
Collector Current-Max (IC)
0.1 A
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
65 V
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30