NEW ENGLAND SEMICONDUCTOR NSG2554 | 搜芯易Sourcengine

NEW ENGLAND SEMICONDUCTOR NSG2554

生命周期状态
Transferred
说明
Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
S-MSFM-P3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
SQUARE
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
HIGH RELIABILITY; AVALANCHE RATED
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
34
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
100
Pulsed Drain Current-Max (IDM) (A)
136
Drain-source On Resistance-Max (ohm)
0.081