NEW ENGLAND SEMICONDUCTOR NSFJ1000 | 搜芯易Sourcengine

NEW ENGLAND SEMICONDUCTOR NSFJ1000

生命周期状态
Transferred
说明
Power Field-Effect Transistor, 3A I(D), 1000V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-213AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
O-MBFM-P2
Configuration
SINGLE
JEDEC-95 Code
TO-213AA
Package Shape
ROUND
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
2
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
70
Drain Current-Max (ID) (A)
3
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
1000
Power Dissipation Ambient-Max (W)
70
Pulsed Drain Current-Max (IDM) (A)
10
Drain-source On Resistance-Max (ohm)
4.2