NEW ENGLAND SEMICONDUCTOR NSF82208 | 搜芯易Sourcengine

NEW ENGLAND SEMICONDUCTOR NSF82208

生命周期状态
Transferred
说明
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-61
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
O-MUPM-D3
Configuration
SINGLE
JEDEC-95 Code
TO-61
Package Shape
ROUND
Package Style
POST/STUD MOUNT Meter
Surface Mount
NO
Terminal Form
SOLDER LUG
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
75
Drain Current-Max (ID) (A)
6.5
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
200
Operating Temperature-Max (Cel)
150
Power Dissipation Ambient-Max (W)
75
Drain-source On Resistance-Max (ohm)
0.8