Microsemi Corporation NSF60812 | 搜芯易Sourcengine

Microsemi Corporation NSF60812

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 8A I(D), 800V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-MBFM-P2
Configuration
SINGLE
JEDEC-95 Code
TO-204
JESD-609 Code
e0
Package Shape
ROUND
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN LEAD
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
8 A
DS Breakdown Voltage-Min
800 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
250 W
Transistor Element Material
SILICON
Drain-source On Resistance-Max
1.2 ohm