ONSEMI NSB1706DMW5T1G | 搜芯易Sourcengine

ONSEMI NSB1706DMW5T1G

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trans Digital BJT NPN 50V 0.1A 385mW 5-Pin SC-88A T/R
类别
Semiconductors Transistors Unijunction Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G5
Configuration
COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e3
Terminal Finish
Matte Tin (Sn) - annealed
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
BUILT-IN BIAS RESISTOR
Number of Elements
2
Number of Terminals
5
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
80
Power Dissipation-Max (W)
0.385
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
0.1
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
50
Time@Peak Reflow Temperature-Max (s)
30