Macom NPTB00004A | 搜芯易Sourcengine

Macom NPTB00004A

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF JFET Transistors DC-6.0GHz 5W Gain 16dB GaN HEMT
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-G8
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
HIGH ELECTRON MOBILITY
J-STD-609 Code
e3
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Finish
MATTE TIN
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
C BAND
Power Gain-Min (Gp) (dB)
12.8
Moisture Sensitivity Level
3
Transistor Element Material
GALLIUM NITRIDE
DS Breakdown Voltage-Min (V)
100
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40