NITRONEX CORP NPT25015DR | 搜芯易Sourcengine

NITRONEX CORP NPT25015DR

生命周期状态
Transferred
RoHS
符合RoHS标准
说明
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-G8
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
S BAND
Moisture Sensitivity Level
3
Transistor Element Material
GALLIUM NITRIDE
DS Breakdown Voltage-Min (V)
100