ONSEMI NJVMJD3055T4G | 搜芯易Sourcengine

ONSEMI NJVMJD3055T4G

生命周期状态
Active
RoHS
符合RoHS标准
说明
Trans GP BJT NPN 60V 10A 1750mW Automotive 3-Pin(2+Tab) DPAK T/R
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e3
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
20
Power Dissipation-Max (W)
20
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
10
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Collector-emitter Voltage-Max (V)
60
Transition Frequency-Nom (fT) (MHz)
2
Screening Level / Reference Standard
AEC-Q101
Time@Peak Reflow Temperature-Max (s)
30