ONSEMI NGTD21T65F2WP | 搜芯易Sourcengine

ONSEMI NGTD21T65F2WP

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
IGBT TRENCH FIELD STOP 650V DIE
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
S-XUUC-N3
Configuration
SINGLE
Package Shape
SQUARE
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
VCEsat-Max (V)
1.9
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
3
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Gate-emitter Thr Voltage-Max (V)
6.5
Collector-emitter Voltage-Max (V)
650
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED