ONSEMI NGTB50N120FL2WAG | 搜芯易Sourcengine

ONSEMI NGTB50N120FL2WAG

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
NGTB50N120 - IGBT, 1200 V FIELD
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSFM-T4
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-247
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e3
VCEsat-Max (V)
2.6
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
536
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
68
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
360
Collector Current-Max (IC) (A)
200
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Gate-emitter Thr Voltage-Max (V)
6.5
Collector-emitter Voltage-Max (V)
1200