ONSEMI NGTB40N120IHLWG | 搜芯易Sourcengine

ONSEMI NGTB40N120IHLWG

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
IGBT 1200V 40A FS1 INDUCTION HEA
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-247
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e3
Case Connection
COLLECTOR
Terminal Finish
TIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
260
Transistor Element Material
SILICON
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
565
Collector Current-Max (IC) (A)
80
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
6.5
Collector-emitter Voltage-Max (V)
1200