ONSEMI NGTB30N140IHR3WG | 搜芯易Sourcengine

ONSEMI NGTB30N140IHR3WG

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 60A I(C), 1400V V(BR)CES, N-Channel, TO-247
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
1.95 V
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-247
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER AMPLIFIER
Gate-emitter Voltage-Max
20 V
Turn-off Time-Nom (toff)
423 ns
Operating Temperature-Max
175 Cel
Operating Temperature-Min
-40 Cel
Collector Current-Max (IC)
60 A
Power Dissipation-Max (Abs)
357 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
6.5 V
Collector-emitter Voltage-Max
1400 V