NGD18N45CLBT4G
ONSEMI
- 生命周期状态EOL
- RoHS符合RoHS标准
- 说明INSULATED GATE BIPOLAR TRANSISTO
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAUTOMOTIVE IGNITION
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE AND RESISTOR
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- J-STD-609 Codee3
- Case ConnectionCOLLECTOR
- Terminal FinishMATTE TIN
- Terminal PositionSINGLE
- Fall Time-Max (ns)7000
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Rise Time-Max (tr) (ns)9000
- Power Dissipation-Max (W)115
- Moisture Sensitivity Level3
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)2920
- Gate-emitter Voltage-Max (V)18
- Peak Reflow Temperature (Cel)260
- Turn-off Time-Nom (toff) (ns)5400
- Collector Current-Max (IC) (A)18
- Operating Temperature-Max (Cel)175
- Gate-emitter Thr Voltage-Max (V)1.9
- Collector-emitter Voltage-Max (V)500
- Time@Peak Reflow Temperature-Max (s)30
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NGD18N45CLBT4G