NGD18N40CLBT4
ONSEMI
- 生命周期状态EOL
- 说明IGBT 430V 15A 115W DPAK
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE AND RESISTOR
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- Case ConnectionCOLLECTOR
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Fall Time-Max (tf)15000 ns
- Number of Elements1
- Rise Time-Max (tr)7000 ns
- Number of Terminals2
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationAUTOMOTIVE IGNITION
- Turn-on Time-Nom (ton)5200 ns
- Gate-emitter Voltage-Max18 V
- Turn-off Time-Nom (toff)13000 ns
- Operating Temperature-Max175 Cel
- Collector Current-Max (IC)15 A
- Power Dissipation-Max (Abs)115 W
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max1.9 V
- Collector-emitter Voltage-Max430 V
- Peak Reflow Temperature (Cel)235
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NGD18N40CLBT4