ONSEMI NGB8202ANTF4G | 搜芯易Sourcengine

ONSEMI NGB8202ANTF4G

生命周期状态
Transferred
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 20A I(C), 440V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
VCEsat-Max (V)
1.9
Case Connection
COLLECTOR
Terminal Position
SINGLE
Fall Time-Max (ns)
14000
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Rise Time-Max (tr) (ns)
7000
Power Dissipation-Max (W)
150
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
9000
Turn-on Time-Nom (ton) (ns)
6500
Gate-emitter Voltage-Max (V)
15
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Max (toff) (ns)
24000
Turn-off Time-Nom (toff) (ns)
18500
Collector Current-Max (IC) (A)
20
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Gate-emitter Thr Voltage-Max (V)
2.1
Collector-emitter Voltage-Max (V)
440
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED