NEW ENGLAND SEMICONDUCTOR NESM240 | 搜芯易Sourcengine

NEW ENGLAND SEMICONDUCTOR NESM240

生命周期状态
Transferred
说明
Power Field-Effect Transistor, 18A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
S-MSFM-P3
Configuration
SINGLE
JEDEC-95 Code
TO-254AA
Package Shape
SQUARE
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
18
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
200
Pulsed Drain Current-Max (IDM) (A)
72