NEW ENGLAND SEMICONDUCTOR NES65 | 搜芯易Sourcengine

NEW ENGLAND SEMICONDUCTOR NES65

生命周期状态
Transferred
说明
Power Bipolar Transistor, 12A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-MSIP-P3
Configuration
DARLINGTON
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
PIN/PEG
J-STD-609 Code
e0
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
500
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
12
Operating Temperature-Max (Cel)
200
Collector-emitter Voltage-Max (V)
60