NEC COMPOUND SEMICONDUCTOR DEVICES LTD NE960R200-A | 搜芯易Sourcengine

NEC COMPOUND SEMICONDUCTOR DEVICES LTD NE960R200-A

生命周期状态
Transferred
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-XUUC-N3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL SEMICONDUCTOR
Operating Mode
DEPLETION MODE
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
3
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
KU BAND
Drain Current-Max (ID) (A)
0.35
Moisture Sensitivity Level
1
Transistor Element Material
GALLIUM ARSENIDE
DS Breakdown Voltage-Min (V)
9