NEC Corporation NE722S01-T1B-A | 搜芯易Sourcengine

NEC Corporation NE722S01-T1B-A

生命周期状态
Transferred
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
X-PXMW-G4
Configuration
SINGLE
Package Shape
UNSPECIFIED
Package Style
MICROWAVE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL SEMICONDUCTOR
J-STD-609 Code
e6
Operating Mode
DEPLETION MODE
Terminal Finish
TIN BISMUTH
DLA Qualification
Not Qualified
Terminal Position
UNSPECIFIED
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
X BAND
Drain Current-Max (ID) (A)
0.04
Transistor Element Material
GALLIUM ARSENIDE
DS Breakdown Voltage-Min (V)
4