NEC Corporation NE6510179A-T1-A | 搜芯易Sourcengine

NEC Corporation NE6510179A-T1-A

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-junction FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

Application
AMPLIFIER
JESD-30 Code
R-CQMW-F4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
MICROWAVE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
HETERO-JUNCTION
J-STD-609 Code
e6
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Finish
TIN BISMUTH
DLA Qualification
Not Qualified
Terminal Position
QUAD
Number of Elements
1
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
L BAND
Drain Current-Max (ID) (A)
2.8
Transistor Element Material
GALLIUM ARSENIDE
DS Breakdown Voltage-Min (V)
6
Power Dissipation Ambient-Max (W)
15