NEC Corporation NE650R479A-T1 | 搜芯易Sourcengine

NEC Corporation NE650R479A-T1

生命周期状态
Transferred
REACH
REACH compliant
说明
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-XQMW-F4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
MICROWAVE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
QUAD
Number of Elements
1
Number of Terminals
4
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
S BAND
Drain Current-Max (ID) (A)
0.6
Transistor Element Material
GALLIUM ARSENIDE
DS Breakdown Voltage-Min (V)
15