NE6500179A
NEC Corporation
- 生命周期状态Discontinued
- REACHREACH compliant
- 说明RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- ApplicationAMPLIFIER
- JESD-30 CodeR-XQMW-F4
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleMICROWAVE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL SEMICONDUCTOR
- J-STD-609 Codee0
- Operating ModeDEPLETION MODE
- Case ConnectionSOURCE
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionQUAD
- Number of Elements1
- Number of Terminals4
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandL BAND
- Drain Current-Max (ID) (A)2.5
- Transistor Element MaterialGALLIUM ARSENIDE
- DS Breakdown Voltage-Min (V)6
- Power Dissipation Ambient-Max (W)7
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NE6500179A