NE55410GR-T3-AZ
NEC COMPOUND SEMICONDUCTOR DEVICES LTD
- 生命周期状态Transferred
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明RF Power Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-PDSO-F16
- ConfigurationSEPARATE, 2 ELEMENTS
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee6
- Operating ModeENHANCEMENT MODE
- Terminal FinishTIN BISMUTH
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals16
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandS BAND
- Drain Current-Max (ID) (A)1
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)65
NE55410GR-T3-AZ有0家供应商货源可供购买或竞价
提交询价
提交询价 您的询价单将直接发送给我们的销售专家: Pari
提交询价
NE55410GR-T3-AZ
提交询价
NE55410GR-T3-AZ