NEC Corporation NE434S01-T1 | 搜芯易Sourcengine

NEC Corporation NE434S01-T1

生命周期状态
Discontinued
说明
RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, Hetero-junction FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-PRDB-G4
Configuration
SINGLE
Package Shape
ROUND
Package Style
DISK BUTTON Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
HETERO-JUNCTION
Operating Mode
DEPLETION MODE
DLA Qualification
Not Qualified
Terminal Position
RADIAL
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
C BAND
Power Gain-Min (Gp) (dB)
13
Drain Current-Max (ID) (A)
0.02
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
4