NEC Corporation NE4210S01-T1B | 搜芯易Sourcengine

NEC Corporation NE4210S01-T1B

生命周期状态
Transferred
REACH
REACH compliant
说明
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
O-XRDB-G4
Configuration
SINGLE
Package Shape
ROUND
Package Style
DISK BUTTON Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
HETERO-JUNCTION
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
DLA Qualification
Not Qualified
Terminal Position
RADIAL
Number of Elements
1
Number of Terminals
4
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
KU BAND
Power Gain-Min (Gp) (dB)
11
Drain Current-Max (ID) (A)
0.015
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
3
Peak Reflow Temperature (Cel)
230
Time@Peak Reflow Temperature-Max (s)
30