NEC Corporation NE3515S02-T1C-A | 搜芯易Sourcengine

NEC Corporation NE3515S02-T1C-A

生命周期状态
Transferred
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PXMW-F4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
MICROWAVE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
HETERO-JUNCTION
J-STD-609 Code
e6
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Finish
TIN BISMUTH
DLA Qualification
Not Qualified
Terminal Position
UNSPECIFIED
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
KU BAND
Power Gain-Min (Gp) (dB)
11
Drain Current-Max (ID) (A)
0.025
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
4