NEC COMPOUND SEMICONDUCTOR DEVICES LTD NE3511S02-T1D | 搜芯易Sourcengine

NEC COMPOUND SEMICONDUCTOR DEVICES LTD NE3511S02-T1D

生命周期状态
Transferred
说明
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PXMW-F4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
MICROWAVE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
HETERO-JUNCTION
Operating Mode
DEPLETION MODE
DLA Qualification
Not Qualified
Terminal Position
UNSPECIFIED
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
KU BAND
Power Gain-Min (Gp) (dB)
12.5
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
4