NEC Corporation NE33200N | 搜芯易Sourcengine

NEC Corporation NE33200N

生命周期状态
EOL
说明
RF JFET Transistors
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-XUUC-N4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
HETERO-JUNCTION
J-STD-609 Code
e0
Operating Mode
DEPLETION MODE
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
UPPER
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
4
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
X BAND
Power Gain-Min (Gp) (dB)
9.5
Transistor Element Material
GALLIUM ARSENIDE
DS Breakdown Voltage-Min (V)
4