NE32900
NEC Corporation
- 生命周期状态Discontinued
- 说明RF Small Signal Field-Effect Transistor, KA Band, Silicon, N-Channel, Hetero-junction FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- FET TechnologyHETERO-JUNCTION
- Operating ModeDEPLETION MODE
- DLA QualificationNot Qualified
- Additional FeatureLOW NOISE
- Number of Terminals4
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandKA BAND
- Power Gain-Min (Gp) (dB)11.5
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)4
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NE32900
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NE32900