NEC COMPOUND SEMICONDUCTOR DEVICES LTD NE321000-A | 搜芯易Sourcengine

NEC COMPOUND SEMICONDUCTOR DEVICES LTD NE321000-A

生命周期状态
Transferred
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, Hetero-junction FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
S-XUUC-N4
Configuration
SINGLE
Package Shape
SQUARE
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
HETERO-JUNCTION
Operating Mode
DEPLETION MODE
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
4
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
KA BAND
Power Gain-Min (Gp) (dB)
12
Drain Current-Max (ID) (A)
0.015
Moisture Sensitivity Level
1
Transistor Element Material
GALLIUM ARSENIDE
DS Breakdown Voltage-Min (V)
3