NEC Corporation NE24200 | 搜芯易Sourcengine

NEC Corporation NE24200

生命周期状态
Discontinued
说明
RF Small Signal Field-Effect Transistor, 2-Element, X Band, Gallium Arsenide, N-Channel, Hetero-junction FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-XUUC-N3
Package Shape
RECTANGULAR
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
HETERO-JUNCTION
Operating Mode
DEPLETION MODE
DLA Qualification
Not Qualified
Terminal Position
UPPER
Additional Feature
LOW NOISE, HIGH RELIABILITY
Number of Elements
2
Number of Terminals
3
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
X BAND
Power Gain-Min (Gp) (dB)
10
Transistor Element Material
GALLIUM ARSENIDE
DS Breakdown Voltage-Min (V)
4