NDTL01N60ZT3G
ONSEMI
- 生命周期状态EOL
- RoHS符合RoHS标准
- 说明MOSFET N-CH 600V 250MA SOT223
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G4
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-261AA
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTIN
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)2
- Drain Current-Max (ID) (A)0.25
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)600
- Feedback Cap-Max (Crss) (pF)3
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)12
- Pulsed Drain Current-Max (IDM) (A)3.4
- Drain-source On Resistance-Max (ohm)15
- Time@Peak Reflow Temperature-Max (s)30
NDTL01N60ZT3G有0家供应商货源可供购买或竞价
提交询价
您的询价单将直接发送给我们的销售专家: Pari
提交询价
NDTL01N60ZT3G