NATIONAL SEMICONDUCTOR CORP NDT014L/S62Z | 搜芯易Sourcengine

NATIONAL SEMICONDUCTOR CORP NDT014L/S62Z

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 2.6A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PDSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-261
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
DUAL
Additional Feature
LOGIC LEVEL COMPATIBLE
Number of Elements
1
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
2.6 A
Transistor Application
SWITCHING
Turn-on Time-Max (ton)
37 ns
DS Breakdown Voltage-Min
60 V
Turn-off Time-Max (toff)
46 ns
Operating Temperature-Max
150 Cel
Transistor Element Material
SILICON
Power Dissipation Ambient-Max
1.1 W
Drain-source On Resistance-Max
0.16 ohm
Pulsed Drain Current-Max (IDM)
10 A