NATIONAL SEMICONDUCTOR CORP NDT014L | 搜芯易Sourcengine

NATIONAL SEMICONDUCTOR CORP NDT014L

生命周期状态
Transferred
REACH
REACH compliant
说明
Power Field-Effect Transistor, 2.6A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
R-PDSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-261
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
LOGIC LEVEL COMPATIBLE
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
3
Drain Current-Max (ID) (A)
2.6
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
37
DS Breakdown Voltage-Min (V)
60
Turn-off Time-Max (toff) (ns)
46
Operating Temperature-Max (Cel)
150
Power Dissipation Ambient-Max (W)
1.1
Pulsed Drain Current-Max (IDM) (A)
10
Drain-source On Resistance-Max (ohm)
0.16