NATIONAL SEMICONDUCTOR CORP NDP506A/J69Z | 搜芯易Sourcengine

NATIONAL SEMICONDUCTOR CORP NDP506A/J69Z

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 26A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
26 A
Transistor Application
SWITCHING
Turn-on Time-Max (ton)
220 ns
Feedback Cap-Max (Crss)
200 pF
DS Breakdown Voltage-Min
60 V
Turn-off Time-Max (toff)
180 ns
Operating Temperature-Max
175 Cel
Transistor Element Material
SILICON
Power Dissipation Ambient-Max
75 W
Drain-source On Resistance-Max
0.05 ohm
Pulsed Drain Current-Max (IDM)
78 A