NATIONAL SEMICONDUCTOR CORP NDB706B/L86Z | 搜芯易Sourcengine

NATIONAL SEMICONDUCTOR CORP NDB706B/L86Z

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 70A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE
JEDEC-95 Code
TO-263AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
70 A
DS Breakdown Voltage-Min
60 V
Transistor Element Material
SILICON
Power Dissipation Ambient-Max
150 W
Drain-source On Resistance-Max
0.018 ohm