NATIONAL SEMICONDUCTOR CORP NDB706AL | 搜芯易Sourcengine

NATIONAL SEMICONDUCTOR CORP NDB706AL

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 75A I(D), 60V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Additional Feature
LOGIC LEVEL COMPATIBLE
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
75 A
Transistor Application
SWITCHING
Turn-on Time-Max (ton)
640 ns
Feedback Cap-Max (Crss)
800 pF
DS Breakdown Voltage-Min
60 V
Turn-off Time-Max (toff)
550 ns
Operating Temperature-Max
175 Cel
Transistor Element Material
SILICON
Power Dissipation Ambient-Max
150 W
Drain-source On Resistance-Max
0.015 ohm
Pulsed Drain Current-Max (IDM)
225 A