NATIONAL SEMICONDUCTOR CORP NDB7060L | 搜芯易Sourcengine

NATIONAL SEMICONDUCTOR CORP NDB7060L

生命周期状态
Transferred
REACH
REACH compliant
说明
Power Field-Effect Transistor, 75A I(D), 60V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
LOGIC LEVEL COMPATIBLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
150
Drain Current-Max (ID) (A)
75
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
640
DS Breakdown Voltage-Min (V)
60
Feedback Cap-Max (Crss) (pF)
800
Turn-off Time-Max (toff) (ns)
550
Operating Temperature-Max (Cel)
175
Power Dissipation Ambient-Max (W)
150
Avalanche Energy Rating (Eas) (mJ)
550
Pulsed Drain Current-Max (IDM) (A)
225
Drain-source On Resistance-Max (ohm)
0.013