INSIGNIS TECHNOLOGY CORP NDB18PFB-4DET | 搜芯易Sourcengine

INSIGNIS TECHNOLOGY CORP NDB18PFB-4DET

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
说明
1Gb DDR2 Synchronous DRAM
类别
Semiconductors Memory ICs DRAMs DDR2 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.32
SB Code
8542.32.00.15

Width
8 mm
Length
10 mm
I/O Type
COMMON
Technology
CMOS
Access Mode
MULTI BANK PAGE BURST
JESD-30 Code
R-PBGA-B60
Memory Width
8
Organization
128MX8
Package Code
LFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, LOW PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory Density
1073741824 bit
Memory IC Type
DDR2 DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Terminal Pitch
0.8 mm
Number of Ports
1
Number of Words
134217728 words
Seated Height-Max
1.2 mm
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Supply Current-Max
150 mA
Number of Functions
1
Number of Terminals
60
Standby Current-Max
9.0E-6 Amp
Number of Words Code
128M
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Sequential Burst Length
4,8
Interleaved Burst Length
4,8
Package Equivalence Code
BGA60,9X12,32
Operating Temperature-Max
95 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Max (Vsup)
1.9 V
Supply Voltage-Min (Vsup)
1.7 V
Supply Voltage-Nom (Vsup)
1.8 V
Clock Frequency-Max (fCLK)
400 MHz