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NCV20091MUTAG

ONSEMI

ONSEMI NCV20091MUTAG
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.33.00.01
  • SB Code
    8542.33.00.00
  • Power
    NO
  • Low-Bias
    YES
  • Wideband
    NO
  • Low-Offset
    NO
  • Micropower
    YES
  • Technology
    CMOS
  • Width (mm)
    1.6
  • Length (mm)
    1.6
  • JESD-30 Code
    S-PDSO-N6
  • Package Code
    HVSSON
  • Package Shape
    SQUARE
  • Package Style
    SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    NO LEAD
  • Amplifier Type
    OPERATIONAL AMPLIFIER
  • Packing Method
    TR
  • Amp Architecture
    VOLTAGE-FEEDBACK
  • Voltage Gain-Min
    17782.79
  • Temperature Grade
    AUTOMOTIVE
  • Terminal Position
    DUAL
  • Programmable Power
    NO
  • Number of Functions
    1
  • Number of Terminals
    6
  • Terminal Pitch (mm)
    0.5
  • Slew Rate-Nom (V/us)
    0.17
  • Package Body Material
    PLASTIC/EPOXY
  • Frequency Compensation
    NO
  • Seated Height-Max (mm)
    0.55
  • Supply Voltage-Nom (V)
    3.3
  • Supply Current-Max (mA)
    0.031
  • Unity Gain BW-Nom (kHz)
    350
  • Package Equivalence Code
    SOLCC6,.06,20
  • Supply Voltage Limit-Max (V)
    7
  • Input Offset Voltage-Max (uV)
    4000
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Operating Temperature-Max (Cel)
    125
  • Operating Temperature-Min (Cel)
    -40
  • Common-mode Reject Ratio-Min (dB)
    53
  • Common-mode Reject Ratio-Nom (dB)
    76
  • Average Bias Current-Max (IIB) (uA)
    0.0015
  • Input Offset Current-Max (IIO) (uA)
    0.0011
  • Screening Level / Reference Standard
    AEC-Q100
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED

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NCV20091MUTAG
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NCV20091MUTAG