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NAND512R3B2BZA1

NUMONYX

NUMONYX NAND512R3B2BZA1
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.51
  • SB Code
    8542.32.00.50
  • Type
    NAND TYPE
  • Technology
    CMOS
  • Width (mm)
    9.5
  • Length (mm)
    12
  • JESD-30 Code
    R-PBGA-B63
  • Memory Width
    8
  • Package Code
    TFBGA
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, THIN PROFILE, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • J-STD-609 Code
    e0
  • Memory IC Type
    FLASH
  • Operating Mode
    ASYNCHRONOUS
  • Parallel/Serial
    PARALLEL
  • Terminal Finish
    TIN LEAD
  • DLA Qualification
    Not Qualified
  • Temperature Grade
    COMMERCIAL
  • Terminal Position
    BOTTOM
  • Memory Organization
    64MX8
  • Number of Functions
    1
  • Number of Terminals
    63
  • Terminal Pitch (mm)
    0.8
  • Access Time-Max (ns)
    25000
  • Number of Words Code
    64M
  • Memory Density (bits)
    536870912
  • Package Body Material
    PLASTIC/EPOXY
  • Seated Height-Max (mm)
    1.05
  • Supply Voltage-Max (V)
    1.95
  • Supply Voltage-Min (V)
    1.7
  • Supply Voltage-Nom (V)
    1.8
  • Number of Words (words)
    67108864
  • Programming Voltage (V)
    1.8
  • Supply Current-Max (mA)
    15
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Operating Temperature-Max (Cel)
    70
  • Operating Temperature-Min (Cel)
    0
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED

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NAND512R3B2BZA1