NAND256W3AACZA6E
Micron Technology
- 生命周期状态Active-Unconfirmed
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Flash, 32MX8, 35ns, PBGA55
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.51
- SB Code8542.32.00.50
- TypeSLC NAND TYPE
- TechnologyCMOS
- Width (mm)8
- Length (mm)10
- JESD-30 CodeR-PBGA-B55
- Memory Width8
- Package CodeTFBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- J-STD-609 Codee1
- Memory IC TypeFLASH
- Operating ModeASYNCHRONOUS
- Parallel/SerialPARALLEL
- Terminal FinishTIN SILVER COPPER
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Memory Organization32MX8
- Number of Functions1
- Number of Terminals55
- Terminal Pitch (mm)0.8
- Access Time-Max (ns)35
- Number of Words Code32M
- Memory Density (bits)268435456
- Package Body MaterialPLASTIC/EPOXY
- Seated Height-Max (mm)1.05
- Supply Voltage-Max (V)3.6
- Supply Voltage-Min (V)2.7
- Supply Voltage-Nom (V)3
- Number of Words (words)33554432
- Programming Voltage (V)3
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-40
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NAND256W3AACZA6E